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| PD -95965 IRG4BC20FD-SPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard D2Pak package * Lead-Free * Generation 4 IGBTs offer highest efficiencies available * IGBTs optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs C Fast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-channel Benefits D 2 Pak Max. 600 16 9.0 64 64 8.0 60 20 60 24 -55 to +150 Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Units V A V W C Thermal Resistance Parameter RJC RJC RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient ( PCB Mounted,steady-state)* Weight Typ. --- --- --- 1.44 Max. 2.1 3.5 80 --- Units C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com 1 11/19/04 IRG4BC20FD-SPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 0.72 VCE(on) Collector-to-Emitter Saturation Voltage -- 1.66 -- 2.06 -- 1.76 Gate Threshold Voltage 3.0 -- VGE(th) VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- -11 gfe Forward Transconductance 2.9 5.1 Zero Gate Voltage Collector Current -- -- ICES -- -- VFM Diode Forward Voltage Drop -- 1.4 -- 1.3 IGES Gate-to-Emitter Leakage Current -- -- V(BR)CES Max. Units Conditions -- V VGE = 0V, IC = 250A -- V/C VGE = 0V, I C = 1.0mA 2.0 IC = 9.0A VGE = 15V -- V IC = 16A See Fig. 2, 5 -- IC = 9.0A, TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 9.0A 250 A VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr I rr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Diode Peak Reverse Recovery Current -- -- Diode Reverse Recovery Charge -- -- Diode Peak Rate of Fall of Recovery -- During tb -- Typ. 27 4.2 9.9 43 20 240 150 0.25 0.64 0.89 41 22 320 290 1.35 7.5 540 37 7.0 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 40 IC = 9.0A 6.2 nC VCC = 400V See Fig. 8 15 VGE = 15V -- TJ = 25C -- ns IC = 9.0A, VCC = 480V 360 VGE = 15V, RG = 50 220 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 18 1.3 -- TJ = 150C, See Fig. 10, 11, 18 -- ns IC = 9.0A, VCC = 480V -- VGE = 15V, RG = 50 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 55 ns TJ = 25C See Fig. 90 TJ = 125C 14 IF = 8.0A 5.0 A TJ = 25C See Fig. 8.0 TJ = 125C 15 VR = 200V 138 nC TJ = 25C See Fig. 360 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 2 www.irf.com IRG4BC20FD-SPBF 3.0 For both: Mounted on PCB LOAD CURRENT (A) Duty cycle: 50% TJ = 125C 55C Tsink = 90C Gate drive as specified 2.0 Square wave: 60% of rated voltage Power Dissipation = 1.75W 1.0 I Ideal diodes 0.0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) TJ = 25 o C TJ = 150 o C 10 I C, Collector-to-Emitter Current (A) TJ = 150 o C 10 TJ = 25 oC 1 1 V GE = 15V 20s PULSE WIDTH 10 1 5 6 7 8 9 V CC = 50V 5s PULSE WIDTH 10 11 12 13 14 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC20FD-SPBF 16 3.0 12 8 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 18 A Maximum DC Collector Current(A) 2.0 IC = 9.0 A 9A 4 IC = 4.5 A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 0.50 0.20 0.10 0.05 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20FD-SPBF 1000 800 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 9.0A 16 C, Capacitance (pF) 600 Cies 12 400 8 200 Coes Cres 4 0 1 10 0 0 5 10 15 20 25 30 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.90 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 0.88 I C = 9.0A 0.86 10 RG = 50Ohm VGE = 15V VCC = 480V IC = 18 A IC = 9.0 A 9 1 0.84 IC = 4.5 A 0.82 0.80 0.78 0 RG , Gate Resistance (Ohm) 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC20FD-SPBF 3.0 2.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC 2.5 VGE = 50Ohm = 150 C = 480V = 15V 100 VGE = 20V T J = 125 oC 1.5 10 1.0 0.5 SAFE OPERATING AREA 0.0 0 4 8 12 16 20 1 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) 10 TJ = 150C TJ = 125C TJ = 25C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC20FD-SPBF 100 100 VR = 200V TJ = 125C TJ = 25C 80 VR = 200V TJ = 125C TJ = 25C IF = 16A t rr - (ns) 60 I F = 8.0A I IRRM - (A) I F = 16A 10 40 IF = 8.0A I F = 4.0A I F = 4.0A 20 0 100 di f /dt - (A/s) 1000 1 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 500 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 200V TJ = 125C TJ = 25C 400 VR = 200V TJ = 125C TJ = 25C 300 di(rec)M/dt - (A/s) Q RR - (nC) I F = 16A 200 IF = 4.0A 1000 IF = 8.0A I F = 16A I F = 8.0A 100 IF = 4.0A 0 100 100 100 di f /dt - (A/s) 1000 di f /dt - (A/s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4BC20FD-SPBF Same type device as D.U.T. 80% of Vce 430F D.U.T. 90% Vge V C 10% 90% td(off) Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf 10% IC 5% t d(on) tr tf t=5s Eon Ets= (E +Eoff ) on Eoff Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg trr Ic Qrr = trr id dt Ic dt tx tx 10% Vcc Vce 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic 10% Irr Vcc Vpk Irr Vcc DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Vce dt Eon = Vce ieIc dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd idIc dt Vd dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC20FD-SPBF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000F 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC20FD-SPBF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" Note: "P" in ass embly line pos ition indicates "Lead-F ree" INT ERNATIONAL RECTIF IER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTERNATIONAL RECT IFIER LOGO PART NUMBER F530S DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS SEMB LY S IT E CODE ASS EMBLY LOT CODE 10 www.irf.com IRG4BC20FD-SPBF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG = 50 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11/04 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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